- Plasma Enhanced Chemical Vapor Deposition
- 원료기체들을 플라즈마 상태로 만들어서 기판에 박막을 증착함
- 저온,저진공의 조건에서 증착이 이루어져서 반도체,디스플레이 산업에서 주력으로 사용되는 증착 방식

* 장비 구성
- Plasma + Tube Furnace + Gas & Vacuum Control

* Plasma System
- RF type
- Frequency : 13.56MHZ
- Auto Matching
- Cooling : Air Cooling
- Plasma before Heating Zone

* Tube Furnace
- Temp : Max 1200℃ (Working Max 1100℃)
- Heating Zone : 300 × 1Zone
- Tube Mat'l & Size : Quartz, Φ60 × 1100
- Temp control : PID Programmable Controller (UP 35A/ Yokogawa)
- Vacuum Sealed Gas Mask with Valve
- Electric : AC 220V, 1Φ, ≒2kw

* Gas & Vacuum control
- Vacuum pressure : 5×10-3Torr
- Vacuum pump : Rotary pump (pumping speed: 100l/min)
- Digital Vacuum Gauge (Pirani Gauge)
- MFC Gas flow Control : (1 or 2 Channel with MFC Controller)
- Pressure Gauge
- Using Gas : O2, N2, Ar, Cl, H2 etc (Hydrogen Gas need the after burner)

※ Equipment Can be built by order SPEC